STMicroelectronics
2STD1665T4
Bipolar Transistors - BJT 150V Vcbo 65V Vceo 6A NPN Low Voltage
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- 2STD1665
- Package
- DPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 65 V
- Collector- Base Voltage VCBO
- 150 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 230 mV
- Maximum DC Collector Current
- 20 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 2.4 mm (Max)
- Length
- 6.6 mm (Max)
- Width
- 6.2 mm (Max)
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 150
- Pd - Power Dissipation
- 15000 mW
- Unit Weight
- 0.009185 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.