ROHM Semiconductor
BC857BHZGT116
Bipolar Transistors - BJT PNP SOT-23 -0.1A 210 to 480hFE -45V
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 45 V
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- 120 mV
- Maximum DC Collector Current
- - 100 mA
- Pd - Power Dissipation
- 350 mW
- Gain Bandwidth Product fT
- 250 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 480
- Technology
- Si
Show more parameters (4)
- Continuous Collector Current
- - 100 mA
- DC Collector/Base Gain hfe Min
- 210
- Qualification
- AEC-Q101
- Part # Aliases
- BC857BHZG
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.