MACOM
CGHV35400F1
GaN FETs Amplifier,400W,GaN HEMT, 50V,2.9-3.5GHz
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- GaN FETs
- Package
- 440225
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
14 parameters- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Id - Continuous Drain Current
- 24 A
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Country of Origin
- US
- Gain
- 11 dB
- Maximum Operating Frequency
- 3.5 GHz
- Minimum Operating Frequency
- 2.9 GHz
- Output Power
- 400 W
- Technology
- GaN
Show more parameters (2)
- Transistor Type
- GaN HEMT
- Vgs - Gate-Source Breakdown Voltage
- - 10 V, 2 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.