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MACOM

CGH27030S

GaN FETs GaN HEMT DC-6.0GHz, 30 Watt

Basic Information

View Datasheet ↗
Manufacturer
MACOM
Product Category
GaN FETs
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

18 parameters
Configuration
Single
Country of Origin
US
Gain
18 dB
Id - Continuous Drain Current
7 A
Maximum Drain Gate Voltage
28 V
Maximum Operating Frequency
2.7 GHz
Maximum Operating Temperature
+ 150 C
Minimum Operating Frequency
0 Hz
Minimum Operating Temperature
- 40 C
Moisture Sensitive
Yes
Output Power
30 W
Pd - Power Dissipation
21.6 W
Show more parameters (6)
Technology
GaN
Transistor Polarity
N-Channel
Transistor Type
GaN HEMT
Vds - Drain-Source Breakdown Voltage
84 V
Vgs - Gate-Source Breakdown Voltage
- 10 V, 2 V
Vgs th - Gate-Source Threshold Voltage
- 3.8 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CGH27030S Specifications and Datasheet | ChipSourceHub