Central Semiconductor
CEN-U57 PBFREE
Bipolar Transistors - BJT PNP 100Vcbo 100Vceo 4.0Vebo 2.0A 30pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- CEN-U57
- Package
- TO-202-2
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Gain Bandwidth Product fT
- 50 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 2 A
- DC Collector/Base Gain hfe Min
- 20 at 100 mA, 1 V
Show more parameters (1)
- Pd - Power Dissipation
- 1.75 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.