Diodes Incorporated
ZXT12N50DXTA
Bipolar Transistors - BJT Dual 50V NPN
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZXT12
- Package
- MSOP-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7.5 V
- Collector-Emitter Saturation Voltage
- 135 mV
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 132 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 250 at 10 mA, 2 V
- Height
- 0.95 mm
Show more parameters (6)
- Length
- 3.1 mm
- Width
- 3.1 mm
- Continuous Collector Current
- 3 A
- DC Collector/Base Gain hfe Min
- 250 at 10 mA, 2 V, 300 at 1 A, 2 V, 150 at 3 A, 2 V, 50 at 5 A, 2 V
- Pd - Power Dissipation
- 870 mW
- Unit Weight
- 0.004938 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.