Infineon Technologies
SMBTA56E6327HTSA1
Bipolar Transistors - BJT AF TRANS GP BJT PNP 80V 0.5A
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Series
- SMBTA56
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 0.25 V
- Maximum DC Collector Current
- 1 A
- Pd - Power Dissipation
- 330 mW
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 1 mm
Show more parameters (7)
- Length
- 2.9 mm
- Technology
- Si
- Width
- 1.3 mm
- Continuous Collector Current
- 500 mA
- Qualification
- AEC-Q101
- Part # Aliases
- 56 E6327 SMBTA SMBTA56E6327XT SP000011692
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.