IXYS
MIXA61H1200ED
IGBT Modules IGBT XPT Module H Bridge
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- IGBT Modules
- Series
- MIXA61H1200
- Package
- E2-Pack
- Mounting Style
- SMD/SMT
- Packaging
- Bulk
Technical Specifications
13 parameters- Product
- IGBT Silicon Modules
- Configuration
- Half Bridge
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Continuous Collector Current at 25 C
- 85 A
- Gate-Emitter Leakage Current
- 500 nA
- Pd - Power Dissipation
- 290 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Technology
- Si
- Maximum Gate Emitter Voltage
- 20 V
- Tradename
- XPT
Show more parameters (1)
- Unit Weight
- 6.172943 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.