Infineon Technologies
BCX55H6327XTSA1
Bipolar Transistors - BJT AF TRANSISTORS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-89-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 1.5 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 250
- Continuous Collector Current
- 1 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 40
- Pd - Power Dissipation
- 2 W
- Part # Aliases
- 55 BCX H6327 SP001125470
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.