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Toshiba

RN4606(TE85L,F)

Bipolar Transistors - Pre-Biased BRT PNP NPN 100mA -50V

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN4606
Package
SOT-26-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

12 parameters
Configuration
Dual
Transistor Polarity
NPN, PNP
Typical Input Resistor
4.7 kOhms
Typical Resistor Ratio
0.1
DC Collector/Base Gain hfe Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Pd - Power Dissipation
300 mW
Emitter- Base Voltage VEBO
5 V
Number of Channels
2 Channel
Maximum DC Collector Current
- 100 mA, 100 mA
Unit Weight
0.001058 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN4606(TE85L,F) Specifications and Datasheet | ChipSourceHub