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Nexperia

PHPT610030PKX

Bipolar Transistors - BJT PNP/PNP high power double bipolar trans

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
LFPAK56D-8
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

18 parameters
Transistor Polarity
PNP
Configuration
Dual
Collector- Emitter Voltage VCEO Max
- 100 V
Collector- Base Voltage VCBO
- 100 V
Emitter- Base Voltage VEBO
- 8 V
Collector-Emitter Saturation Voltage
- 220 mV
Maximum DC Collector Current
- 3 A
Gain Bandwidth Product fT
125 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
DC Current Gain hFE Max
220 at - 500 mA
Height
1.05 mm
Show more parameters (6)
Length
5.3 mm
Width
4.7 mm
Continuous Collector Current
- 3 A
Pd - Power Dissipation
25 W
Qualification
AEC-Q101
Unit Weight
0.003407 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PHPT610030PKX Specifications and Datasheet | ChipSourceHub