SemiQ
GP2T030A170H
SiC MOSFETs SiC MOSFET 1700V, 30mohm TO-247-4L, Industrial
Basic Information
View Datasheet ↗- Manufacturer
- SemiQ
- Product Category
- SiC MOSFETs
- Series
- GP2T
- Package
- TO-247-4
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
21 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.7 kV
- Id - Continuous Drain Current
- 83 A
- Rds On - Drain-Source Resistance
- 36 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 25 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
- Qg - Gate Charge
- 233 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 564 W
- Channel Mode
- Enhancement
Show more parameters (9)
- Configuration
- Single
- Country of Origin
- PH
- Fall Time
- 21 ns
- Product
- SiC MOSFETS
- Rise Time
- 8 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 48 ns
- Typical Turn-On Delay Time
- 19 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.