Toshiba
MT3S20P(TE12L,F)
RF Bipolar Transistors X34 Pb-FREE PW-MINI DIODE
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- RF Bipolar Transistors
- Package
- SC-62-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 100
- Collector- Emitter Voltage VCEO Max
- 12 V
- Emitter- Base Voltage VEBO
- 1.5 V
- Continuous Collector Current
- 80 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 7 GHz
- Output Power
- 1.8 W
Show more parameters (2)
- Maximum DC Collector Current
- 80 mA
- Pd - Power Dissipation
- 400 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.