STMicroelectronics
STS1DNC45
MOSFET N-Ch 450 Volt 0.4 A
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STS1DNC45
- Package
- SOIC-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 450 V
- Id - Continuous Drain Current
- 400 mA
- Rds On - Drain-Source Resistance
- 4.1 Ohms
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 7 nC
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2 W
- Configuration
- Dual
Show more parameters (12)
- Channel Mode
- Enhancement
- Tradename
- SuperMESH
- Height
- 1.65 mm
- Length
- 5 mm
- Product
- MOSFET Small Signal
- Transistor Type
- 2 N-Channel
- Type
- MOSFET
- Width
- 4 mm
- Fall Time
- 4 ns
- Rise Time
- 4 ns
- Typical Turn-On Delay Time
- 6.7 ns
- Unit Weight
- 0.002998 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.