Renesas Electronics
UPA2826T1S-E2-AT
MOSFETs POWER TRANSISTOR MOS-IC
Basic Information
View Datasheet ↗- Manufacturer
- Renesas Electronics
- Product Category
- MOSFETs
- Package
- HWSON-8
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- P-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 27 A
- Rds On - Drain-Source Resistance
- 4.3 mOhms
- Vgs - Gate-Source Voltage
- - 12 V, 12 V
- Vgs th - Gate-Source Threshold Voltage
- 1.5 V
- Qg - Gate Charge
- 37 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.5 W
- Channel Mode
- Enhancement
Show more parameters (7)
- Country of Origin
- MY
- Fall Time
- 120 ns
- Forward Transconductance - Min
- 25 S
- Rise Time
- 94 ns
- Transistor Type
- 1 P-Channel
- Typical Turn-Off Delay Time
- 120 ns
- Typical Turn-On Delay Time
- 50 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.