Microchip Technology
2N5345
Bipolar Transistors - BJT Power BJT
Basic Information
- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-66
- Mounting Style
- Through Hole
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 300 V
- Collector- Base Voltage VCBO
- 300 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 3 V
- Pd - Power Dissipation
- 40 W
- Gain Bandwidth Product fT
- 60 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
Show more parameters (3)
- Continuous Collector Current
- 1 A
- DC Collector/Base Gain hfe Min
- 25
- DC Current Gain hFE Max
- 100
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.