ROHM Semiconductor
IMB9AT110
Bipolar Transistors - Pre-Biased DUAL PNP 50V 70MA
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- IMB9A
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Configuration
- Dual
- Transistor Polarity
- PNP
- Typical Input Resistor
- 10 kOhms
- Typical Resistor Ratio
- 4.7
- DC Collector/Base Gain hfe Min
- 68
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Continuous Collector Current
- - 70 mA
- Peak DC Collector Current
- - 100 mA
- Pd - Power Dissipation
- 300 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 68
Show more parameters (3)
- Height
- 1.1 mm
- Length
- 2.9 mm
- Width
- 1.6 mm
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.