Wolfspeed / Cree
CGH09120F
RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- RF JFET Transistors
- Mounting Style
- Screw Mount
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Type
- HEMT
- Technology
- GaN
- Gain
- 21 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 120 V
- Vgs - Gate-Source Breakdown Voltage
- - 10 V, 2 V
- Id - Continuous Drain Current
- 28 A
- Output Power
- 20 W
- Maximum Drain Gate Voltage
- 28 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 56 W
Show more parameters (6)
- Application
- Telecom
- Configuration
- Single
- Operating Frequency
- 910 MHz
- Operating Temperature Range
- - 40 C to + 150 C
- NF - Noise Figure
- 3 dB
- Vgs th - Gate-Source Threshold Voltage
- - 3 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.