IXYS
IXFA12N50P
MOSFET 500V 12A
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXFA12N50P
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 12 A
- Rds On - Drain-Source Resistance
- 500 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 5.5 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 29 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 200 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- HiPerFET
- Height
- 16 mm
- Length
- 10.66 mm
- Transistor Type
- 1 N-Channel
- Type
- Polar Power MOSFET HiPerFET
- Width
- 4.83 mm
- Forward Transconductance - Min
- 7.5 S
- Fall Time
- 20 ns
- Rise Time
- 27 ns
- Typical Turn-Off Delay Time
- 65 ns
- Typical Turn-On Delay Time
- 22 ns
- Unit Weight
- 0.056438 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.