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Vishay Semiconductors

SISA72DN-T1-GE3

MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SISA
Package
PowerPAK-1212-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

23 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
60 A
Rds On - Drain-Source Resistance
3.5 mOhms
Vgs - Gate-Source Voltage
- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage
1.1 V
Qg - Gate Charge
41.5 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
52 W
Show more parameters (11)
Channel Mode
Enhancement
Tradename
TrenchFET, PowerPAK
Configuration
Single
Country of Origin
CN
Fall Time
7 ns
Forward Transconductance - Min
70 S
Rise Time
20 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
24 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
0.032487 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SISA72DN-T1-GE3 Specifications and Datasheet | ChipSourceHub