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onsemi

NSVBCW68GLT1G

Bipolar Transistors - BJT SS SOT23 GP XSTR PNP

Basic Information

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Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
BCW68GL
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

19 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Maximum DC Collector Current
800 mA
Collector- Emitter Voltage VCEO Max
45 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
700 mV
Pd - Power Dissipation
225 mW
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (7)
Qualification
AEC-Q101
Continuous Collector Current
- 800 mA
Country of Assembly
CN
Country of Diffusion
MY
Country of Origin
MY
DC Collector/Base Gain hfe Min
60
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSVBCW68GLT1G Specifications and Datasheet | ChipSourceHub