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Diodes Incorporated

ZXTP56020FDBQ-7

Bipolar Transistors - BJT 20V DUAL PNP LOW VCE(SAT) TRANSISTOR

Basic Information

View Datasheet ↗
Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Series
ZXTP56020FDBQ
Package
UDFN-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Dual
Collector- Emitter Voltage VCEO Max
- 20 V
Collector- Base Voltage VCBO
- 20 V
Emitter- Base Voltage VEBO
- 7 V
Collector-Emitter Saturation Voltage
- 390 mV
Maximum DC Collector Current
- 2 A
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 2 A
DC Collector/Base Gain hfe Min
100
Show more parameters (3)
Pd - Power Dissipation
2470 mW
Qualification
AEC-Q101
Unit Weight
0.000229 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

ZXTP56020FDBQ-7 Specifications and Datasheet | ChipSourceHub