Central Semiconductor
2N5629
Bipolar Transistors - BJT NPN High Pwr
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5629
- Package
- TO-3-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- T
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 2 V
- Maximum DC Collector Current
- 16 A
- Gain Bandwidth Product fT
- 1 MHz
- Minimum Operating Temperature
- - 60 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 0.45 A
- DC Collector/Base Gain hfe Min
- 4 at 16 A, 2 V
- Pd - Power Dissipation
- 200 W
Show more parameters (2)
- Part # Aliases
- 2N5629 TIN/LEAD
- Unit Weight
- 0.225789 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.