ON Semiconductor
NSS12100M3T5G
Bipolar Transistors - BJT 12V LOW VSAT SOT723 PNP
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS12100M3
- Package
- SOT-723-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 12 V
- Collector- Base Voltage VCBO
- 12 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 1 A
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 200 at 10 mA, 2 V
- Height
- 0.5 mm
- Length
- 1.2 mm
- Width
- 0.8 mm
Show more parameters (4)
- Continuous Collector Current
- - 1 A
- DC Collector/Base Gain hfe Min
- 80
- Pd - Power Dissipation
- 625 mW
- Unit Weight
- 0.000459 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.