ON Semiconductor
MSD602-RT1G
Bipolar Transistors - BJT SS GP XSTR NPN 25V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MSD602-RT1
- Package
- SC-59-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Maximum DC Collector Current
- 0.5 A
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 1.09 mm
- Length
- 2.9 mm
- Width
- 1.5 mm
- DC Collector/Base Gain hfe Min
- 120
Show more parameters (2)
- Pd - Power Dissipation
- 200 mW
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.