Nexperia
PDTD114EU-QX
Bipolar Transistors - BJT PDTD114EU-Q/SOT323/SC-70
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 10 V
- Collector-Emitter Saturation Voltage
- 100 mV
- Pd - Power Dissipation
- 425 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 70
Show more parameters (1)
- Part # Aliases
- 934667978115
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.