Analog Devices
HMC-ALH444-SX
RF Amplifier GaAs HEMT WBand lo Noise amp, 1 - 12 GHz
Basic Information
View Datasheet ↗- Manufacturer
- Analog Devices Inc.
- Brand
- Analog Devices
- Product Category
- RF Amplifier
- Series
- HMC-ALH444G
- Package
- Die
- Mounting Style
- SMD/SMT
- Packaging
- Gel Pack
Technical Specifications
15 parameters- Operating Frequency
- 1 GHz to 12 GHz
- Operating Supply Voltage
- 5 V
- Operating Supply Current
- 55 mA
- Gain
- 17 dB
- NF - Noise Figure
- 1.75 dB
- Type
- Low Noise Amplifiers
- Technology
- GaAs
- P1dB - Compression Point
- 19 dBm
- OIP3 - Third Order Intercept
- 28 dBm
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 85 C
- Country of Origin
- US
Show more parameters (3)
- Input Return Loss
- 10 dB
- Number of Channels
- 1 Channel
- Unit Weight
- 0.412264 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.