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ROHM Semiconductor

2SAR513PHZGT100

Bipolar Transistors - BJT SOT-89 50V BJT PNP BIPOLAR TRN

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - BJT
Package
SOT-89-3
Mounting Style
SMD/SMT
Packaging
Cut Tape

Technical Specifications

15 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
400 mV
Pd - Power Dissipation
2 W
Gain Bandwidth Product fT
400 MHz
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 1 A
Country of Origin
KR
Show more parameters (3)
DC Collector/Base Gain hfe Min
180 at - 50 mA, - 2 V
DC Current Gain hFE Max
450 at - 50 mA, - 2 V
Part # Aliases
2SAR513PHZG

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SAR513PHZGT100 Specifications and Datasheet | ChipSourceHub