ROHM Semiconductor
EMX26T2R
Bipolar Transistors - BJT TRANS GP BJT NPN 50V 0.15A 6PIN
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- EMX26
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 12 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Maximum DC Collector Current
- 150 mA
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 820 at 1 mA, 5 V
- Height
- 0.5 mm
Show more parameters (5)
- Length
- 1.6 mm
- Width
- 1.2 mm
- DC Collector/Base Gain hfe Min
- 820 at 1 mA, 5 V
- Pd - Power Dissipation
- 150 mW
- Part # Aliases
- EMX26
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.