Central Semiconductor
2N4296 TIN/LEAD
Bipolar Transistors - BJT NPN 350Vcbo 250V 4.0Vebo 1.0A 20W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N4296
- Package
- TO-66-2
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 250 V
- Collector- Base Voltage VCBO
- 350 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 900 mV
- Pd - Power Dissipation
- 20 W
- Gain Bandwidth Product fT
- 20 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current
- 1 A
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 35 at 5 mA, 10 V
- DC Current Gain hFE Max
- 150 at 50 mA, 10 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.