Microchip / Microsemi
2N4300
Bipolar Transistors - BJT Power BJT
Basic Information
- Manufacturer
- Microchip
- Brand
- Microchip / Microsemi
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Not compliant (source record)
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 0.3 V
- Gain Bandwidth Product fT
- 30 MHz
- DC Current Gain hFE Max
- 120
- Continuous Collector Current
- 2 A
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 26 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.