Central Semiconductor
2N2219A TIN/LEAD
Bipolar Transistors - BJT 60Vcbo 30Vceo 5.0V 800mA 800mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N2219A
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 75 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 800 mW
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 800 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 35 at 100 uA, 10 V
- DC Current Gain hFE Max
- 300 at 150 mA, 10 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.