ON Semiconductor
NSS40302PDR2G
Bipolar Transistors - BJT COMP NPN/PNP LO VCE 40V 6A
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS40302PD
- Package
- SOIC-Narrow-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 6 V
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 200 at 10 mA, 2 V
- Height
- 1.5 mm
- Length
- 5 mm
Show more parameters (4)
- Width
- 4 mm
- DC Collector/Base Gain hfe Min
- 200 at 10 mA, 2 V, 200 at 500 mA, 2 V, 180 at 1 A, 2 V, 180 at 2 A, 2 V
- Pd - Power Dissipation
- 783 mW
- Unit Weight
- 0.005044 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.