NXP Semiconductors
MRFX1K80GNR5
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MRFX1K80
- Package
- OM-1230G-4L
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- Dual N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 43 A
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 179 V
- Gain
- 24.4 dB
- Output Power
- 1.8 kW
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 1.8 MHz to 400 MHz
- Type
- RF Power MOSFET
- Forward Transconductance - Min
- 44.7 S
- Number of Channels
- 2 Channel
Show more parameters (5)
- Moisture Sensitive
- Yes
- Pd - Power Dissipation
- 3333 W
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 2.1 V
- Part # Aliases
- 935362677578
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.