Infineon Technologies
BUZ30AH3045AATMA1
MOSFET N-Ch 200V 21A D2PAK-2
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 200 V
- Id - Continuous Drain Current
- 21 A
- Rds On - Drain-Source Resistance
- 100 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.1 V
- Vgs - Gate-Source Voltage
- 20 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 125 W
- Configuration
- Single
Show more parameters (13)
- Channel Mode
- Enhancement
- Tradename
- SIPMOS
- Height
- 15.65 mm
- Length
- 10 mm
- Transistor Type
- 1 N-Channel
- Width
- 4.4 mm
- Forward Transconductance - Min
- 6 S
- Fall Time
- 90 ns
- Rise Time
- 70 ns
- Typical Turn-Off Delay Time
- 250 ns
- Typical Turn-On Delay Time
- 30 ns
- Part # Aliases
- BUZ30A BUZ3AH345AXT H3045A SP000736082
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.