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ROHM Semiconductor

2SA1774EBTLR

Bipolar Transistors - BJT TRANS GP BJT PNP 50V 0.15A 3-P

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - BJT
Series
2SA1774EB
Package
SOT-416-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 50 V
Collector- Base Voltage VCBO
- 60 V
Emitter- Base Voltage VEBO
- 6 V
Collector-Emitter Saturation Voltage
- 500 mV
Maximum DC Collector Current
- 150 mA
Gain Bandwidth Product fT
140 MHz
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
560
Continuous Collector Current
- 150 mA
Show more parameters (3)
DC Collector/Base Gain hfe Min
120
Pd - Power Dissipation
150 mW
Unit Weight
0.000212 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SA1774EBTLR Specifications and Datasheet | ChipSourceHub