IXYS
IXFN60N80P
MOSFET DIODE Id54 BVdass800
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXFN60N80
- Package
- SOT-227-4
- Mounting Style
- Chassis Mount
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 53 A
- Rds On - Drain-Source Resistance
- 140 mOhms
- Vgs - Gate-Source Voltage
- 30 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1040 W
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (10)
- Tradename
- HiPerFET
- Height
- 9.6 mm
- Length
- 38.23 mm
- Transistor Type
- 1 N-Channel
- Width
- 25.42 mm
- Fall Time
- 26 ns
- Rise Time
- 29 ns
- Typical Turn-Off Delay Time
- 110 ns
- Typical Turn-On Delay Time
- 36 ns
- Unit Weight
- 1.058219 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.