Toshiba
TPH6400ENH,L1Q
MOSFET X35PBF Power MOSFET Trans VGS10VVDS200V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- TPH6400ENH
- Package
- SOP-Advance-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 200 V
- Id - Continuous Drain Current
- 13 A
- Rds On - Drain-Source Resistance
- 54 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 11.2 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 57 W
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- U-MOSVIII-H
- Height
- 0.95 mm
- Length
- 5 mm
- Transistor Type
- 1 N-Channel
- Width
- 5 mm
- Unit Weight
- 0.030018 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.