Central Semiconductor
2N1711 TIN/LEAD
Bipolar Transistors - BJT NPN 75Vcbo 50Vceo 7.0Vebo 25pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N1711
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 75 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 800 mW
- Gain Bandwidth Product fT
- 70 MHz
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current
- 500 mA
- DC Collector/Base Gain hfe Min
- 100
Show more parameters (1)
- DC Current Gain hFE Max
- 300
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.