Toshiba
2SA1832-GR,LF
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA1832
- Package
- SOT-426-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 100 mV
- Maximum DC Collector Current
- - 150 mA
- Gain Bandwidth Product fT
- 80 MHz
- Maximum Operating Temperature
- + 125 C
- DC Current Gain hFE Max
- 400 at - 2 mA, - 6 V
- DC Collector/Base Gain hfe Min
- 70 at - 2 mA, - 6 V
Show more parameters (2)
- Pd - Power Dissipation
- 100 mW
- Unit Weight
- 0.000085 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.