MACOM
NPT1012B
RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN
Basic Information
View Datasheet ↗- Manufacturer
- MACOM
- Product Category
- RF JFET Transistors
- Mounting Style
- Screw Mount
- Packaging
- Tray
Technical Specifications
15 parameters- Transistor Type
- HEMT
- Technology
- GaN Si
- Gain
- 13 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Vgs - Gate-Source Breakdown Voltage
- 3 V
- Id - Continuous Drain Current
- 4 mA
- Maximum Operating Temperature
- + 200 C
- Pd - Power Dissipation
- 44 W
- Configuration
- Single
- Operating Frequency
- 4 GHz
- P1dB - Compression Point
- 43 dBm
Show more parameters (3)
- Rds On - Drain-Source Resistance
- 440 mOhms
- Vgs th - Gate-Source Threshold Voltage
- - 1.8 V
- Unit Weight
- 0.007760 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.