Diodes Incorporated
ZDT694TA
Bipolar Transistors - BJT Dual NPN Medium Power
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- ZDT694
- Package
- SM-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 120 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 0.5 A
- Gain Bandwidth Product fT
- 130 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 500
- Height
- 1.6 mm
Show more parameters (4)
- Length
- 6.7 mm
- Width
- 3.7 mm
- DC Collector/Base Gain hfe Min
- 500 at 100 mA, 2 V, 400 at 200 mA, 2 V, 150 at 400 mA, 2 V
- Pd - Power Dissipation
- 2.75 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.