Diodes Incorporated
ZXMN10A11KTC
MOSFET N-Chan 100V MOSFET (UMOS)
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- ZXMN10A
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 3.5 A
- Rds On - Drain-Source Resistance
- 350 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 5.4 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 8.5 W
Show more parameters (12)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 2.39 mm
- Length
- 6.73 mm
- Transistor Type
- 1 N-Channel
- Width
- 6.22 mm
- Forward Transconductance - Min
- 4 S
- Fall Time
- 3.5 ns
- Rise Time
- 1.7 ns
- Typical Turn-Off Delay Time
- 7.4 ns
- Typical Turn-On Delay Time
- 2.7 ns
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.