Infineon Technologies
BCX51H6327XTSA1
Bipolar Transistors - BJT AF TRANSISTORS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-89-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 45 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Maximum DC Collector Current
- 1.5 A
- Gain Bandwidth Product fT
- 125 MHz
- Maximum Operating Temperature
- + 150 C
- Height
- 1.5 mm
- Length
- 4.5 mm
Show more parameters (5)
- Width
- 2.5 mm
- Continuous Collector Current
- 1 A
- Pd - Power Dissipation
- 2 W
- Part # Aliases
- 51 BCX H6327 SP001125334
- Unit Weight
- 0.004603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.