Central Semiconductor
PN4354 TIN/LEAD
Bipolar Transistors - BJT PNP 60Vcbo 60Vces 5.0Vceo 500mA 30pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN4354
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Pd - Power Dissipation
- 625 mW
- Gain Bandwidth Product fT
- 500 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 500 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 25 at 10 V, 100 uA
- DC Current Gain hFE Max
- 500 at 10 V, 10 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.