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Toshiba

RFM08U9X(TE12L,Q)

RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 5A 20W 36V

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
RF MOSFET Transistors
Series
RFM08
Package
PW-X-4
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
Compliant (source record)

Technical Specifications

12 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
5 A
Vds - Drain-Source Breakdown Voltage
36 V
Gain
11.7 dB
Output Power
7.5 W
Configuration
Single
Operating Frequency
520 MHz
Type
RF Power MOSFET
Pd - Power Dissipation
20 W
Vgs - Gate-Source Voltage
5 V
Vgs th - Gate-Source Threshold Voltage
1.5 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RFM08U9X(TE12L,Q) Specifications and Datasheet | ChipSourceHub