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onsemi

NSVBC858CLT1G

Bipolar Transistors - BJT SS SOT23 GP XSTR PNP 30V

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
BC858CL
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

17 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Single
Maximum DC Collector Current
100 mA
Collector- Emitter Voltage VCEO Max
30 V
Collector- Base Voltage VCBO
30 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
650 mV
Pd - Power Dissipation
225 mW
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (5)
Qualification
AEC-Q100
Country of Origin
CN
DC Collector/Base Gain hfe Min
420 at - 2 mA, - 5 V
DC Current Gain hFE Max
800 at -2 mA, - 5 V
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NSVBC858CLT1G Specifications and Datasheet | ChipSourceHub