NXP Semiconductors
A2T21S260W12NR3
RF MOSFET Transistors Airfast RF Power LDMOS Transistor 2110-2200 MHz, 56 W Avg., 28 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- OM-880X-2L2L
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 3.2 A
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 65 V
- Gain
- 17.9 dB
- Output Power
- 56 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Operating Frequency
- 2110 MHz to 2200 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 1 Channel
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
Show more parameters (3)
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
- Part # Aliases
- 935339757528
- Unit Weight
- 0.134366 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.