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Diodes Incorporated

MMBT3906FA-7B

Bipolar Transistors - BJT 40V PNP SM Trans 435mW -40V Vceo

Basic Information

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Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Series
MMBT39
Package
X2-DFN0806-3
Mounting Style
SMD/SMT
Packaging
Single
RoHS
Compliant (source record)

Technical Specifications

11 parameters
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 40 V
Collector- Base Voltage VCBO
- 40 V
Emitter- Base Voltage VEBO
- 6 V
Collector-Emitter Saturation Voltage
- 0.25 V
Maximum DC Collector Current
- 500 mA
Gain Bandwidth Product fT
300 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
435 mW

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMBT3906FA-7B Specifications and Datasheet | ChipSourceHub