NXP Semiconductors
MHT1008NT1
RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 12.5 W CW, 28 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- PLD-1.5W
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
17 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 154 mA
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 65 V
- Gain
- 18.6 dB
- Output Power
- 12.5 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 2.45 GHz
- Type
- RF Power MOSFET
- Number of Channels
- 1 Channel
- Moisture Sensitive
- Yes
Show more parameters (5)
- Pd - Power Dissipation
- 48.1 W
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
- Part # Aliases
- 935320685515
- Unit Weight
- 0.009877 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.